Abstract:In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in lateral implanted 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V−1s−1) than PDA in N2O (20 cm2V−1s−1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. On the other hand, cyclic gate bias stress measurements allowed to separate the contributions of interface states (Nit) both on the upper and bottom parts of the 4H-SiC band gap and near interface oxide traps (NIOTs) in the two oxides. In particular, it was found that NO annealing reduced the total density of charges trapped at the interface states down to 3 × 1011 cm−2 and those trapped inside the oxide down to 1 × 1011 cm−2. Electron energy loss spectroscopy demonstrated that the reduction of these traps in the NO annealed sample is due to the lower amounts of sub-stoichiometric silicon oxide (~1nm) and carbon-related defects (<1nm) at the interface, respectively. This correlation represents a further step in the comprehension of the physics of the SiO2/4H-SiC interface explaining the mobility and threshold voltage behavior of 4H-SiC MOSFETs. Furthermore, the experimental results indicate that an accurate control of SiC re-oxidation during post-deposition annealing in MOSFET technology is a key factor to improve the mobility and threshold voltage stability.

Comparative Study on Slow-State Near Interface Hole Traps in NO and Ar Annealed N-type 4H-Sic MOS Capacitors by Ultraviolet Light

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-Sic MOS Capacitors and MOSFETs