Abstract:Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled taking into account also the interface state density in a tunnelling relaxation model and it allowed to locate traps within a tunnelling distance up to 1.3nm from the SiO2/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a Non-Abrupt (NA) SiO2/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiOx matrix. A mixed sp2/sp3 carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination.

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-Sic MOS Capacitors and MOSFETs

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Comparative Study on Slow-State Near Interface Hole Traps in NO and Ar Annealed N-type 4H-Sic MOS Capacitors by Ultraviolet Light

Observation of Near Interface Oxide Traps in Single Crystalline Nd2O3 on Si(111) by Quasistatic C-V Method

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Electrical characterization of SiC MOS capacitors: A critical review

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure