Abstract:Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interface and bulk semiconductor, it is critical to enhance the performance of oxide semiconductor transistors. Atomic layer-deposited (ALD) indium oxide (In 2 O 3 ) has been reported with superior performance such as high drive current, high mobility, steep subthreshold slope, and ultrathin channel. In this work, the interface and bulk traps in the MOS gate stack of ALD In 2 O 3 transistors are systematically studied by using the C–V and conductance method. A low EOT of 0.93 nm is achieved directly from the accumulation capacitance in C–V measurement, indicating a high-quality gate oxide and oxide/semiconductor interface. Defects in bulk In 2 O 3 with energy levels in the subgap are confirmed to be responsible for the conductance peak in G P /ω versus ω curves by TCAD simulation of C–V and G–V characteristics. A high n-type doping of 1×10 20 /cm 3 is extracted from C–V measurement. A high subgap density of states (DOS) of 3.3×10 20 cm −3 eV −1 is achieved using the conductance method, which contributes to the high n-type doping and high electron density. The high n-type doping further confirms the capability of channel thickness scaling because the charge neutrality level aligns deeply inside the conduction band.

Observation of Near Interface Oxide Traps in Single Crystalline Nd2O3 on Si(111) by Quasistatic C-V Method

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si(100) with Pt Top Electrode

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance