What problem does this paper attempt to address?

The problems that this paper attempts to solve are: How to quantitatively characterize and understand the influence of nitridation on the density of conduction - band - edge traps (Dit(E)) near the SiO₂/SiC interface, and the influence of these trap densities on the electron transport properties (especially the field - effect mobility µFE). Specifically, the main research problems include: 1. **The influence of high trap density on the mobility at the SiO₂/SiC interface**: - The high MOS channel resistance of SiC MOSFETs is caused by low mobility, and the low mobility is considered to be related to the high trap density near the SiO₂/SiC interface. Therefore, understanding and reducing these traps are crucial for improving device performance. 2. **The limitations of existing characterization methods**: - The traditional Hi - Lo C - V method is not suitable for characterizing the trap density distribution Dit(E) close to the conduction - band edge, and the correlation between its results and the actual mobility is not strong. - Other techniques, such as deep - level transient spectroscopy and the conductance method, can extend the energy range that can be characterized to a certain extent, but still cannot effectively characterize the trap density close to the conduction - band edge. 3. **Developing new characterization methods**: - In order to solve the above problems, the author has developed a new method that combines Hall - effect measurement and split capacitance - voltage (split C - V) measurement to more accurately characterize the trap density Dit(E) close to the conduction - band edge. 4. **The effect of nitridation treatment**: - Study the specific influence of nitridation treatment on the trap density at the SiO₂/SiC interface, and evaluate whether it can significantly reduce the trap density, thereby improving the electron transport performance. Through these studies, the author hopes to obtain basic knowledge about the trap density at the SiO₂/SiC interface and provide theoretical basis and technical support for improving the performance of SiC MOSFETs. ### Key formulas 1. **Total carrier density**: \[ n_{\text{total}}(V_g)=\int_{V_{\text{min}}}^{V_g}C_{gc}(V)\,dV \] 2. **Trapped carrier density**: \[ n_{\text{trap}}(V_g)=n_{\text{total}}(V_g)-n_{\text{free}}(V_g) \] 3. **The relationship between trapped electron density and trap density**: \[ n_{\text{trap}}(E_F^s)=\int_{-\infty}^{\infty}D_{it}(E)\frac{dE}{1 + g\exp[\beta(E - E_F^s)]} \] 4. **The relationship between trap energy and Fermi level**: \[ E_t = E_F^s-\beta^{-1}\ln g \] 5. **The relationship between free - carrier density and Fermi level**: \[ n_{\text{free}}\sim\sqrt{2e^{-2}\varepsilon_s\varepsilon_0k_BT}\left[N_A\beta e^{\psi_s}+N_CF_{3/2}(-\beta(E_C^s - E_F^s))\right]^{1/2}-n_{\text{dep}} \] 6. **The derivative of the Fermi level with respect to the gate voltage**: \[ \frac{dE_F^s}{dV_g}\sim\frac{2k_BT(n_{\text{free}}+n_{\text{dep}})}{\varepsilon_s\varepsilon_0N_CF_{1/2}[-\beta(E_C^s - E_F^s)]}\frac{dn_{\text{free}}}{dV_g} \] These formulas help the author quantitatively analyze the influence of nitridation treatment on the trap density at the SiO₂/SiC interface and solve...

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