Abstract:Interface trapping is one of the most notorious effects that limit device performance in GaN-based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a comprehensive study on interface traps in AlGaN/GaN MISHEMTs using low pressure chemical vapor deposition SiNx as gate dielectric. We combined the trapping analysis in MIS diodes and actual MISHEMTs to estimate the interface trap state densities (D-it) and their distributions in the device, and to investigate their influence on device electrical properties. Two types of interface traps with different emission time constants, designated as "slow" and "fast" traps, were identified and characterized by means of pulse-mode current-voltage measurements and a frequency dependent conductance method. It was found that "fast" traps located in the device access region could be effectively restrained by passivation using plasma enhanced chemical vapor deposition SiNx. However, "slow" traps, no matter whether located beneath the metal gate or in the access region, were less influenced by passivation. Due to the strong interference of traps in the access region, Dit extraction using the conventional conductance method was not accurate for the lateral GaN-based MIS diodes. A modified small-signal equivalent circuit that includes the impedance of traps in the access region is proposed. Proper passivation for the device access region is essential when using the conductance method for GaN-based MIS devices.

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Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

A test structure and spectroscopic method for monitoring interface traps

Investigating the mechanism of SiO 2 /4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO 2

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Observation of Near Interface Oxide Traps in Single Crystalline Nd2O3 on Si(111) by Quasistatic C-V Method

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs