Abstract:Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interface and bulk semiconductor, it is critical to enhance the performance of oxide semiconductor transistors. Atomic layer-deposited (ALD) indium oxide (In 2 O 3 ) has been reported with superior performance such as high drive current, high mobility, steep subthreshold slope, and ultrathin channel. In this work, the interface and bulk traps in the MOS gate stack of ALD In 2 O 3 transistors are systematically studied by using the C–V and conductance method. A low EOT of 0.93 nm is achieved directly from the accumulation capacitance in C–V measurement, indicating a high-quality gate oxide and oxide/semiconductor interface. Defects in bulk In 2 O 3 with energy levels in the subgap are confirmed to be responsible for the conductance peak in G P /ω versus ω curves by TCAD simulation of C–V and G–V characteristics. A high n-type doping of 1×10 20 /cm 3 is extracted from C–V measurement. A high subgap density of states (DOS) of 3.3×10 20 cm −3 eV −1 is achieved using the conductance method, which contributes to the high n-type doping and high electron density. The high n-type doping further confirms the capability of channel thickness scaling because the charge neutrality level aligns deeply inside the conduction band.

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Impact of Interface Traps on Switching Behavior of Normally‐off AlGaN/GaN MOS‐HEMTs

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Correlation Between Border Traps and Exposed Surface Properties in Gate Recessed Normally-off Al2O3/GaN MOSFET

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Improved Interface Properties Of Gan Metal-Oxide-Semiconductor Device With Non-Polar Plane And Aln Passivation Layer

Corrigendum: Analysis of Interface Trap States in InAlN/AlN/GaN Heterostructures (2014 Semicond. Sci. Technol. 29 095011)

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

PEALD Induced Interface Engineering of AlNO/AlGaN/GaN MIS Diode with Alternate Insertion of AlN in Al2O3

Evaluation of the Border Traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS Structure with Long Time Constant Using Quasi-Static Capacitance Voltage Method

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Normally-off Al 2 O 3 /GaN MOSFET: Role of border traps on the device transport characteristics