Abstract:A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical vapor deposition (MOCVD) grown <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 (3 nm) and a thick low-pressure chemical vapor deposition (LPCVD) grown Si 3 N 4 (30 nm) in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. The quality of the Si 3 N 4 /(Al)GaN interface and the effect on threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> ) instability and dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> in the MIS-HEMTs with/without the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 layer are investigated by high-frequency capacitance-voltage (HFCV), quasi-static (QS) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> (QSCV), time-of-fly (TOF) stress/measure, and QS <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {D}}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> methods. It is founded that the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer is effective in improving the dielectric/III-N interface morphology. As a result, better <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> stability and lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON},\text {D}}/{R} _{ \mathrm{\scriptscriptstyle ON},\text {S}}$ </tex-math></inline-formula> ratio are observed in devices with the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in-situ</italic> Si 3 N 4 interfacial layer due to the reduced density of traps close to the dielectric/III-N interface. Time-dependent dielectric breakdown and Weibull performance further verified that the proposed bilayer gate dielectric stack is a promising structure for the high-reliability power transistors.

Evaluation of the Border Traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS Structure with Long Time Constant Using Quasi-Static Capacitance Voltage Method

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model

A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

Investigation of the Trap States and <inline-formula> <tex-math notation="LaTeX">$V_{\text{TH}}$ </tex-math></inline-formula> Instability in LPCVD Si<sub>3</sub>N<sub>4</sub>/AlGaN/GaN MIS-HEMTs with an <italic>In-Situ</italic> Si<sub>3</sub>N<sub>4</sub> Interfacial Layer

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Investigation of the Trap States in Fully-Recessed Normally off LPCVD-Si<inf>3</inf>N<inf>4</inf>/PEALD-AlN/GaN MIS-HEMT with in-Situ N<inf>2</inf> or H<inf>2</inf>/N<inf>2</inf> Plasma Pretreatment

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors