Abstract:Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mode. Application of positive gate voltage results in accumulation of electrons in the “n-type” BixSe1-x layer resulting in an increase of conductivity. In order to explain the drain current-gate voltage behavior, we used a simple polynomial model to describe the change in the device characteristics due to charge traps. The model was fitted with our experimental results. We further analyzed the gate leakage current, which showed a good match with trap-assisted tunneling (TAT) process that was used to derive trap parameters. The obtained trap parameters show the presence of ultra-deep charge traps contributing to the hysteretic behavior.Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mo...

A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance

Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Characterization Of Border Traps In Iii-V Mosfets Using An Rf Transconductance Method

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Evaluation of the Border Traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS Structure with Long Time Constant Using Quasi-Static Capacitance Voltage Method

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

An Investigation on Border Traps in III–V MOSFETs With an In 0.53 Ga 0.47 As Channel

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

A New Method of Studying on the Dynamic Parameters of Bulk Traps in Thin SiO2 Layer of MOS Structures

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs

Correlation Between Border Traps and Exposed Surface Properties in Gate Recessed Normally-off Al2O3/GaN MOSFET