Abstract:A difference analysis method has been presented to separate and characterize interface and oxide traps generated in the metal–oxide–semiconductor structure under Fowler–Nordheim stress. The oxide trap relaxation measurement has been performed in dynamic voltage mode. For a high constant voltage stress condition, the effective oxide traps can be obtained by the difference Fowler–Nordheim current relaxation characteristics. For a low-voltage condition, the interface and effective oxide traps can be separated and determined by the difference subthreshold voltage relaxation characteristics. Using combined difference Fowler–Nordheim current and subthreshold voltage measurements, the density, centroid, and generation/capture cross section of the oxide traps can be obtained without the double current–voltage technique, thus permitting more accurate and quick measurement of the generated oxide traps. All difference Fowler–Nordheim current and subthreshold voltage versus the electron-fluence characteristics exhibit spectrum features. Analytical expressions for computing the interface and oxide traps have been derived and experimental results have been presented for a Fowler–Nordheim tunnel metal–oxide–semiconductor structure. Two interface and two oxide traps generated at Fowler–Nordheim stress have been obtained by the new technique.

A New Method of Studying on the Dynamic Parameters of Bulk Traps in Thin SiO2 Layer of MOS Structures

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

A new technique for determining the capture cross section of the oxide traps in MOS structures

A test structure and spectroscopic method for monitoring interface traps

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Trap kinetics in metal-oxide-semiconductor structures at high electric field

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al 2 O 3 /GaN MOS Device

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Oxide Trap Relaxation Spectroscopy: A New Difference Method to Determine Trap in Oxidized Silicon

Dynamic Oxide Current Relaxation Spectroscopy for Thin Insulator Mos Structure under Fowler-Nordheim Stresses

Investigation of Traps at MoS2/Al2O3Interface in Nmosfets by Low-Frequency Noise

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Dynamic Oxide Voltage Relaxation Spectroscopy

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

A Current Transient Method for Trap Analysis in BiFeO3 Thin Films

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution