Abstract:A difference analysis method has been presented to separate and characterize interface and oxide traps generated in the metal–oxide–semiconductor structure under Fowler–Nordheim stress. The oxide trap relaxation measurement has been performed in dynamic voltage mode. For a high constant voltage stress condition, the effective oxide traps can be obtained by the difference Fowler–Nordheim current relaxation characteristics. For a low-voltage condition, the interface and effective oxide traps can be separated and determined by the difference subthreshold voltage relaxation characteristics. Using combined difference Fowler–Nordheim current and subthreshold voltage measurements, the density, centroid, and generation/capture cross section of the oxide traps can be obtained without the double current–voltage technique, thus permitting more accurate and quick measurement of the generated oxide traps. All difference Fowler–Nordheim current and subthreshold voltage versus the electron-fluence characteristics exhibit spectrum features. Analytical expressions for computing the interface and oxide traps have been derived and experimental results have been presented for a Fowler–Nordheim tunnel metal–oxide–semiconductor structure. Two interface and two oxide traps generated at Fowler–Nordheim stress have been obtained by the new technique.

Trap kinetics in metal-oxide-semiconductor structures at high electric field

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Experimental Study on the Oxide Trap Coupling Effect in Metal Oxide Semiconductor Field Effect Transistors with HfO2 Gate Dielectrics

Potential barrier modulation caused by high electric field stressing and its effects on the measurement of traps

A New Method of Studying on the Dynamic Parameters of Bulk Traps in Thin SiO2 Layer of MOS Structures

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Field-assisted Thermally Stimulated Current of Mobile Ions in a Dielectric Layer of a Metal–oxide–semiconductor Structure

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Trap creation of solid dielectric in high field

A new technique for determining the capture cross section of the oxide traps in MOS structures

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Oxide Trap Relaxation Spectroscopy: A New Difference Method to Determine Trap in Oxidized Silicon

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Dynamic Oxide Current Relaxation Spectroscopy for Thin Insulator Mos Structure under Fowler-Nordheim Stresses

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Field Related Passivation of Interface Trap after High-Field Electron Injection

On the Frequency Dependence of Oxide Trap Coupling in Nanoscale MOSFETs: Understanding Based on Complete 4-State Trap Model

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

A Current Transient Method for Trap Analysis in BiFeO3 Thin Films