Abstract:In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail. The influence of deposited charges on the electric field in the depletion region is investigated. The electric field decreases in a short time period due to the neutralization of the space charge. After that, the electric field increases first and then decreases when the deposited charge is moved out. The movement of the deposited charge in the body mainly occurs through ambipolar diffusion because of its high-density electrons and holes. The derivation of the variation in electric field in the depletion region is modeled in the physical process according to the analysis. In combination with the ambipolar diffusion model of excessive charge in the body, a physics-based model is built to describe the current pulse in the drain terminal. The proposed model takes into account the influence of multiple factors, like linear-energy transfer (LET), drain bias, and the doping concentration of the well. The model results are validated with the simulation results from TCAD. Through calculation, the root-mean-square error (RMSE) between the simulation and model is less than 3.7 × 10-4, which means that the model matches well with the TCAD results. Moreover, a CMOS inverter is simulated using TCAD and SPICE to validate the applicability of the proposed model in a circuit-level simulation. The proposed model captures the variation in net voltage in the inverter. The simulation result obviously shows the current plateau effect, while the relative error of the pulse width is 23.5%, much better than that in the classic model. In comparison with the classic model, the proposed model provides an RMSE of 7.59 × 10-5 for the output current curve and an RMSE of 0.158 for the output voltage curve, which are significantly better than those of the classic model. In the meantime, the proposed model does not produce extra simulation time compared with the classic double exponential model. So, the model has potential for application to flow estimation of the soft error rate (SER) at the circuit level to improve the accuracy of the results.

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Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Low frequency noise in tunneling field effect transistors

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Experimental Study on the Oxide Trap Coupling Effect in Metal Oxide Semiconductor Field Effect Transistors with HfO2 Gate Dielectrics

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A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

On a Mott formalism for modeling oxide thin-film transistors

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor

Analytical Current Model of Tunneling Field-Effect Transistor Considering the Impacts of Both Gate and Drain Voltages on Tunneling.

A Tunneling Field Effect Transistor Model Combining Interband Tunneling with Channel Transport

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Trap kinetics in metal-oxide-semiconductor structures at high electric field