Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Valence-band Tunneling Enhanced Hot Carrier Degradation in Ultrathin Oxide Nmosfets

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

On the Mechanism for Interface Trap Generation in MOS Transistors Due to Channel Hot Carrier Stressing

Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET