Abstract:Analytical equations are developed for electrostatic assessment of accumulation-mode thin-film transistors (TFTs) so that potential, electric field, and accumulation layer free electron concentration profiles may be generated. Additionally, equations are derived for plotting TFT trap density versus surface potential, based on accurate extraction of the channel mobility as a function of gate voltage. A key factor in formulating these device physics equations is distinguishing between a 'long-base' or 'short-base' channel thickness. A 'long-base' ('short-base') channel thickness is defined to occur when the accumulation layer thickness (as calculated in the normal manner) is less than (greater than) the physical thickness of the channel layer. The electrostatic equations derived herein are applied to the analysis of two amorphous oxide semiconductor (AOS) TFTs with differing channel layers, i.e., a 40 nm amorphous indium gallium zinc oxide (a-IGZO) or a 7 nm amorphous indium zinc oxide (a-IZO). Application of these equations suggests that optimal TFT performance is obtained when the channel layer thickness is chosen to be similar to its Debye length. Estimated trap densities of these two AOS TFTs are found to be quite similar. Therefore, the superior mobility performance of the a-IZO TFT compared to the a-IGZO TFT is ascribed to the smaller effective mass of a-IZO, assuming that the maximum (no trapping) drift mobility in the channel is established by the thermally-limited diffusive mobility.

On a Mott formalism for modeling oxide thin-film transistors

Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

(Invited) Thin-Film Transistor Accumulation-Mode Modeling

A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits

Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature

Surface-potential-based Drain Current Model for Two-Dimensional Organic TFTs Using the Multiple Trapping and Release Conduction Theory

Density-of-State and Trap Modeling of Low-Voltage Electric-Double-Layer TFTs

Modeling of Self-Aligned Vertical ZnO Thin-Film Transistors

Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-layer Thin Film Transistors

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing

A unified drain current model for poly-Si and a-InGaZnO TFTs under different temperatures

Physical modeling for photo-capacitance characteristics of metal oxide TFTs