Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics
Sangwon Lee,Sungwook Park,Sungchul Kim,Yongwoo Jeon,Kichan Jeon,Jun-Hyun Park,Jaechul Park,Ihun Song,Chang Jung Kim,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim
DOI: https://doi.org/10.1109/led.2009.2039634
IF: 4.8157
2010-03-01
IEEE Electron Device Letters
Abstract:An extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitance–voltage ($C$–$V$) characteristics is proposed and verified by comparing the measured $I$–$V$ characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters. It takes on the superposition of exponential tail states and exponential deep states with characteristic parameters for $N_{\rm TA}\! =\! \hbox{1.1}\! \times\! \hbox{10}^{17}\ \hbox{cm}^{-3}\! \cdot\! \hbox{eV}^{-1}$, $N_{\rm DA}\! =\! \hbox{4}\! \times\! \hbox{10}^{15}\ \hbox{cm}^{-3}\! \cdot\! \hbox{eV}^{-1}$, $kT_{\rm TA}\! =\! \hbox{0.09}\ \hbox{eV}$, and $kT_{\rm DA}\! =\! \hbox{0.4}\ \hbox{eV}$. The proposed technique allows obtaining the frequency-independent $C$– $V$ curve, which is very useful for oxide semiconductor TFT modeling and characterization, and considers the nonlinear relation between the energy level of DOS and the gate voltage $V_{\rm GS}$. In addition, it is a simple, fast, and accurate extraction method for DOS in amorphous InGaZnO TFTs without optical illumination, temperature dependence, and numerical iteration.
engineering, electrical & electronic