The Amorphous Oxide Semiconductor Thin Film Transistors a-GIZO TFT Device Simulation, Neural Modeling and Validation of Model

Abdelhafid Marroun,Naima Amar Touhami,Taj-eddin El Hamadi

DOI: https://doi.org/10.1007/s42341-020-00276-y

2021-01-10

Transactions on Electrical and Electronic Materials

Abstract:<p class="a-plus-plus">An a-IGZO TFT is analyzed in this paper. The Universal Organic TFT (UOTFT) equivalent circuit model is used to model the a-IGZO TFT equivalent circuit. Physical simulation is performed to examine the channel width effect (W) on its current–voltage characteristics I<sub class="a-plus-plus">ds</sub>, gate-to-source capacitance C<sub class="a-plus-plus">gs</sub>, and gate-to-drain capacitance C<sub class="a-plus-plus">gd</sub>. Moreover, analytical modeling is put into the study of the source current I<sub class="a-plus-plus">ds</sub>. A multilayer perceptron (MLP) neural modeling method is applied and tested with different numbers of neurons to elaborate an equivalent mathematical model of the used a-IGZO TFT output characteristic I<sub class="a-plus-plus">ds</sub>, as well as to develop an equivalent circuit model of the proposed a-IGZO TFT gate-to-source capacitance C<sub class="a-plus-plus">gs</sub>, and gate-to-drain capacitance C<sub class="a-plus-plus">gd</sub>. Results prove that the multilayer perceptron (MLP) neural modeling and more precisely MLP3 [4 5 1] and MLP3 [4 4 1] represents the most optimal solution compared with the analytical model for Ids and capacitances (C<sub class="a-plus-plus">gs</sub>, C<sub class="a-plus-plus">gd</sub>), respectively. They also prove that the used Universal Organic TFT (UOTFT) Model is a good candidate for a-IGZO TFT equivalent circuit modeling.</p>