Abstract:An (a-IGZO TFT) is modeled through experimental-based (a-IGZO TFTs) using (TCAD) simulator. A parametric study is performed on the numerical fit of the designed (a-IGZO TFT) current–voltage (I/V) characteristics, to obtain the near conduction band defects parameters optimal values, and to investigate the effect of the near band defects caused by oxygen vacancies on the (a-IGZO TFTs) output parameters. A new model approach is proposed for simulating (a-IGZO) electrical properties. The proposed model is known as a density of state models (DOS), and it is composed of two principal components, conduction band tail (left( {g_{ct}^{A} left( E ight)} ight)) and Gaussian distributed donor-like (left( {g_{G}^{D} left( E ight)} ight)). The study of the presented (DOS) models is based on both conduction band tail elements that are known as tail acceptor density ((g_{ta})) as well as tail acceptor energy ((E_{a})), and Gaussian distributed donor-like elements which are donor gaussian energy ((E_{D})) and donor gaussian distribution ((g_{gd})). Results show that the tail acceptor states defects ((g_{ta}), (E_{a})) near the conduction band is the cause of the mobility and gaussian donor distribution degradation near the conduction band, and it has a major impact on changes that occur in the subthreshold region data [threshold voltage (Vth), subthreshold swing (SS), and on-state/off-states current ratio (Ion/Ioff)].

A unified drain current model for poly-Si and a-InGaZnO TFTs under different temperatures

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Improvement of Sub-Threshold Current Models for A-Si:H Thin-Film Transistors