Abstract:For field emission from wide-band-gap semiconductor nanostructures, nonlinear plots on Fowler–Nordheim (FN) coordinates and unacceptably large field enhancement factors (βFN) are often obtained by fitting based on FN equation. In the present work, the field-induced hot-electron emission model is developed and is found to give theoretical findings consistent with the experimental observation. The hot electrons are produced by heating effect of penetration field into the emitting tip of the nanostructure. This energy is expressed by effective electron temperature Te, which is much higher than the temperature of bulk structure. By combining the effective electron temperature with thermal emission function and Murphy and Good integration function, the relation between emission current density and external field is derived and the field enhancement factor (βTe) can be calculated quantitatively. For evaluation of the theoretical model, ZnO nanostructure is selected as a concrete example. The results are found to agree with experiment findings. Extremely large field enhancement factor is not needed in our model and nonlinear property of saturation region emerges in nature in our calculation.

Drain current model based on the Meyer-Neldel Rule for polycrystalline ZnO thin-film transistors at different temperatures

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A unified drain current model for poly-Si and a-InGaZnO TFTs under different temperatures

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

Introducing Effective Temperature into Arrhenius Equation with Meyer-Neldel Rule for Describing Both Arrhenius and Non-Arrhenius Dependent Drain Current of Amorphous InGaZnO TFTs

An Experimentally Verified Temperature Dependent Drain Current Fluctuation Model for Low Temperature Applications

Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors

Drain Current Model for Antiambipolar Organic TFTs at Different Temperatures

A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing

On a Mott formalism for modeling oxide thin-film transistors

Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent with Pao–Sah Model

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

A theoretical approach to study the thermal impact of the DC and RF characteristics of a MgZnO/ZnO HEMT

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Consistent Model of NBTI with Low Drain Voltage in P-MOSFETs

A Compact Model of Subthreshold Current with Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs