Abstract:A detailed investigation of the steady-state and transient leakage currents in thin oxides is proposed. The experimental data are compared with numerical results obtained from a model based on an inelastic trap-assisted tunneling process, which includes both electron and hole contributions. In order to accurately reproduce the transient discharge currents, a continuous distribution of oxide traps was adopted. The energies of these levels can be either in correspondence of the conduction or valence band edges of the adjacent silicon/polysilicon layers. Both electrons and holes contribute to the transient stress-induced leakage current (SILC), but the extracted trap densities cannot account for the steady-state SILC. A different mechanism, involving trap levels with energy aligned to the energy gap of the silicon layers is proposed and is developed in the following paper. The model can be applied to any type of device and bias conditions and may be used to correctly recognize the role of electron and hole SILC and the spatial and energy distribution of defect states.

A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors

Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Quantitative Analysis of Current-Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent with Pao–Sah Model

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Drain current model based on the Meyer-Neldel Rule for polycrystalline ZnO thin-film transistors at different temperatures

An analytic model of silicon-based nanowire gated field effect transistor terahertz signal detection

A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

An analytical terahertz detection theory for Silicon-based nanowire MOS field effect transistor

A complete charge based compact model for silicon nanowire FETs including doping and advanced physical effects

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure

Terahert Detection Analysis Of Nanowire Gated Field Effect Transistor

Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K

Modeling of SILC based on electron and hole tunneling. I. Transient effects

Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect Transistors

An Analytic Model for Gate-All-around Silicon Nanowire Tunneling Field Effect Transistors

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary