Abstract:Strained layer Si/sub 0.7/Ge/sub 0.3/ pMOSFETs were fabricated and shown to exhibit enhanced hole mobility, up to 35% higher for a SiGe device with 3-nm-thick Si-cap, and lower 1/f noise compared to Si surface channel pMOSFETs. The 1/f noise in the investigated devices was dominated by mobility fluctuation noise and found to be lower in the SiGe devices. The source of the mobility fluctuations was determined by investigating the electric field dependence of the 1/f noise. It was found that the SiO/sub 2//Si interface roughness scattering plays an important role for the mobility fluctuation noise, although not dominating the effective mobility. The physical separation of the carriers from the SiO/sub 2//Si interface in the buried SiGe channel pMOSFETs resulted in lower SiO/sub 2//Si interface roughness scattering, which explains the reduction of 1/f noise in these devices. The 1/f noise mechanism was experimentally verified by studying 1/f noise in SiGe devices with various thicknesses of the Si-cap. A too large Si-cap thickness led to a deteriorated carrier confinement in the SiGe channel resulting in that considerable 1/f noise was generated in the parasitic current in the Si-cap. In our experiments, the SiGe devices with a Si-cap thickness in the middle of the interval 3-7 nm exhibited the lowest 1/f noise.

Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Analysis of 1/F Noise for Polycrystalline Silicon Tfts Considering Mobility Power-Law Parameter

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors

Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

$1/F$ Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime

Above-Threshold $1\!/\!f$ Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Elucidation of electric characteristics for P and N type polycrystalline silicon vertical thin film transistors

Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs

A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm

1/F Noise in Si and Si/sub 0.7/ge/sub 0.3/ Pmosfets

Low Frequency Noise of the Tunneling Contact Thin-Film Transistors

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2 Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Theoretical Investigation of Current-Noise Characteristics in Finite Semiconductor Superlattice with Correlated Thickness Randomness

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

On the grain boundary barrier height and threshold voltage of undoped polycrystalline silicon thin-film transistors