Abstract:Low-frequency noise (LFN) in InSnZnO (ITZO) thin-film-transistors (TFT) with high-quality SiO2 gate oxide (GO) stacks is studied. This stack is fabricated by the plasma enhanced chemical vapor deposition (PECVD) and comprises two single layers. One layer is deposited by a SiH4 source (SiH4–SiO2), and the other uses a tetraethyl-orthosilicate precursor (TEOS-SiO2). The drain current noise power spectral densities follow the typical 1/f rule, and the main origin of LFN changes with the variation of drain current intensities. At low drain current intensities, LFN is affected by grain boundaries in the channel. As the drain current intensities increase, LFN originates from the carrier number fluctuations in devices with single TEOS-SiO2 GOs and from the carrier number with correlated mobility fluctuations in devices with SiO2 stacks GOs. At extremely high drain current intensities, the contact noise acts as a significant source of LFN in devices with SiO2 GO stacks. According to the carrier number with correlated mobility fluctuation (ΔN−Δμ) model, the devices with optimal stacks GOs exhibit a relatively low trap density near the ITZO/SiO2 interface. Additionally, these devices have a lower border trap density in GOs compared to those with single compositions. It demonstrates that high-quality SiO2 stacks reduce traps near the SiO2/ITZO interface, leading to enhanced devices performance. This work provides a precise and efficient method to evaluate the quality of GOs in metal oxide TFTs.

Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

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Analysis of 1/F Noise for Polycrystalline Silicon Tfts Considering Mobility Power-Law Parameter

Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Low Frequency Noise of the Tunneling Contact Thin-Film Transistors

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Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

Low-frequency noise in narrow channel MOSFETs

Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

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Low-frequency noise in InSnZnO thin film transistors with high-quality SiO2 gate oxide stacks

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