Abstract:As field effect transistors are reduced to nanometer dimensions, experimental and theoretical research has shown a gradual change in noise generation mechanisms. There are few studies on noise theory for small nanoscale transistors, and Monte Carlo (MC) simulations mainly focus on 2D devices with larger nanoscale dimensions. In this study, we employed MC simulation techniques to establish a 3D device simulation process. By setting device parameters and writing simulation programs, we simulated the raw data of channel current noise for a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 nm channel length and calculated the drain output current based on these data, thereby achieving static testing of the simulated device. Additionally, this study obtained a 3D potential distribution map of the device channel surface area. Based on the original data from the simulation analysis, this study further calculated the power spectral density of the channel current noise and analyzed how the channel current noise varies with gate voltage, source-drain voltage, temperature, and substrate doping density. The results indicate that under low-temperature conditions, the channel current noise of the 10 nm MOSFET is primarily composed of suppressed shot noise, with the proportion of thermal noise in the total noise slightly increasing as temperature rises. Under normal operating conditions, the channel current noise characteristics of the 10 nm MOSFET device are jointly characterized by suppressed shot noise, thermal noise, and cross-correlated noise. Among these noise components, shot noise is the main source of noise, and its suppression degree decreases as the bias voltage is reduced. These findings are consistent with experimental observations and theoretical analyses found in the existing literature.

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

1/F Noise in Si and Si/sub 0.7/ge/sub 0.3/ Pmosfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics

Analysis Of Flicker Noise In Two-Dimensional Multilayer Mos2 Transistors

Numerical modeling of RF noise in scaled MOS devices

Monte Carlo Study of Germanium N- and P- MOSFETs

New Insights into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology

Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling

Low-frequency Noise Characteristics in the MOSFETs Processed in 65 Nm Technology

An experimental study of the influence of channel positioning on low-frequency noise in Si 0

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

Random Telegraph Noise in 30 Nm FETs with Conventional and High-κ Dielectrics

Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis