Abstract:As field effect transistors are reduced to nanometer dimensions, experimental and theoretical research has shown a gradual change in noise generation mechanisms. There are few studies on noise theory for small nanoscale transistors, and Monte Carlo (MC) simulations mainly focus on 2D devices with larger nanoscale dimensions. In this study, we employed MC simulation techniques to establish a 3D device simulation process. By setting device parameters and writing simulation programs, we simulated the raw data of channel current noise for a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) with a 10 nm channel length and calculated the drain output current based on these data, thereby achieving static testing of the simulated device. Additionally, this study obtained a 3D potential distribution map of the device channel surface area. Based on the original data from the simulation analysis, this study further calculated the power spectral density of the channel current noise and analyzed how the channel current noise varies with gate voltage, source-drain voltage, temperature, and substrate doping density. The results indicate that under low-temperature conditions, the channel current noise of the 10 nm MOSFET is primarily composed of suppressed shot noise, with the proportion of thermal noise in the total noise slightly increasing as temperature rises. Under normal operating conditions, the channel current noise characteristics of the 10 nm MOSFET device are jointly characterized by suppressed shot noise, thermal noise, and cross-correlated noise. Among these noise components, shot noise is the main source of noise, and its suppression degree decreases as the bias voltage is reduced. These findings are consistent with experimental observations and theoretical analyses found in the existing literature.

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Numerical modeling of RF noise in scaled MOS devices

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Gate current modeling of high-k stack nanoscale MOSFETs

Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks

Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling

New Insights into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology

A Semi-Empirical Analytic Model for Threshold Voltage Instability in MOSFETs with High-Kgate Stacks

Flicker Noise Characterization and Modeling of MOSFETs for RF IC Design

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Compact Channel Noise Models for Deep-Submicron MOSFETs

Physics-based Compact Modeling of Statistical Flicker Noise in FinFET Technology

Experimental study on MOSFET's flicker noise under switching conditions and modelling in RF applications

Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation

Reduction of Gate Current in Nanoscale MOS Devices

Compact Modeling of Dynamic Threshold Voltage of Nanoscale FinFET High K Gate Stack and Application in Circuit Simulation