Abstract:1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS) effect can result in the reduction of 1/f noise at high longitudinal electric fields. A new physics-based compact model is for the first time introduced for single- to few- layer 2D-FETs in this study, precisely validating 1/f noise experiments for various types of devices. The proposed model mainly accounts for the measured 1/f noise bias dependence as the latter is defined by different physical mechanisms. Thus, analytical expressions are derived, valid in all regions of operation in contrast to conventional approaches available in literature so far, accounting for carrier number fluctuation (DN), mobility fluctuation (Dmu}) and contact resistance (DR) effects based on the underlying physics that rules these devices. DN mechanism due to trapping/detrapping together with an intense Coulomb scattering effect, dominates 1/f noise from medium to strong accumulation region while Dmu, is also demonstrated to modestly contribute in subthreshold region. DR can also be significant in very high carrier density. The VS induced reduction of 1/f noise measurements at high electric fields, is also remarkably captured by the model. The physical validity of the model can also assist in extracting credible conclusions when conducting comparisons between experimental data from devices with different materials or dielectrics.

Physics-based Compact Modeling of Statistical Flicker Noise in FinFET Technology

New Insights into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology

Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs

Flicker Noise Characterization and Modeling of MOSFETs for RF IC Design

Compact Channel Noise Models for Deep-Submicron MOSFETs

Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application

Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Predictive Compact Modeling of Random Variations in FinFET Technology for 16/14nm Node and Beyond

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

A Novel General Compact Model Approach for 7nm Technology Node Circuit Optimization from Device Perspective and Beyond.

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

TCAD‐based statistical modeling methodology for nanoscale FinFET variability

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

T-FinFET Mobility Enhancement from Process-Induced Stress and Compact Model Development

A Computationally Efficient Compact Model for Ferroelectric FinFETs Switching with Asymmetric Non-Periodic Input Signals

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

A tunnel FET compact model including non-idealities with verilogy implementation