Abstract:Over the past few years tremendous progress has been made on the process, application, device physics and compact modeling of nanowire MOSFETs. We would like to review the above aspects of silicon-based nanowire, focusing on its crucial compact models and the circuit performance demonstration based on our group research work and understanding on nanowire MOSFET progress. Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. Both the top-down (Singh et al., 2008) and bottom-up (Lu & Lieber, 2006) approaches are widely studied to prepare ultra small nanowire. With bottom-up method, nanowires are generally synthesized by using metal nanoclusters as catalysts via a vapor-liquid-solid process (Lu & Lieber, 2006). After growth nanowires are transferred to silicon substrate to form FET structure. With top-down technique there are various fabrication approaches, such as hard mask trimming, etching in H2 ambient and stress limited oxidation (Singh et al., 2008). 5-nm gate length device has been demonstrated (Liow et al., 2008). Nanowire MOSFETs prepared with both methods find application in logic circuits (Singh et al., 2008), memory (Singh et al., 2008) and sensors (Stern et al., 2008). Due to the quantum confinement in cross section of nanowire MOSFETs, especially of nanowires with diameter smaller than 15nm, electron mobility behaves differently from its bulk counterpart. Phonon-limited electron mobility decreases with reducing the wire size (Kotlyar et al., 2004) while total electron mobility is enhanced due to volume inversion at high transverse field (Jin et al., 2007). Although whether or not ballistic transport can occur in the silicon nanowire MOSFETs with ultrasmall channel length is disputable (Ferry et al., 2008), it deserves our attention. In the ballistic transport regime, carrier scattering in the device channel is totally suppressed. The study of ballistic transport in nanowire MOSFETs provides the upper limit to their performances. Under extreme scaling of nanowire MOSFETs, the atoms in nanowire cross section are countable. It is believed that the change in bandstructure of one dimensional nanowire influences the device performances (Neophytou et al., 2008). The above mentioned phenomenon are studied and simulated with various numerical approaches and also need to be accounted for in the advanced compact models.

T-FinFET Mobility Enhancement from Process-Induced Stress and Compact Model Development

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Multiphysics Simulation of Chiplet Integration Process-Induced Stress Effects on AC and DC Quantum Transport of FinFET from System Technology Co-Optimization Perspective

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

An Efficient Finite-Element Method-Based Stress Simulator for Integrated Circuit Optimization Designs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Silicon-Based Nanowire Mosfets: From Process And Device Physics To Simulation And Modeling

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Channel Stress Engineering Through Source/Drain Recess Optimization and Its Process Variation Study for 5 Nm-Node FinFETs

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology Through Material Engineering and Metrology Optimization

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique