Abstract:Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demonstrated to analyze the stress-affected zone of through-silicon via (TSV) and its influences on a planar metal oxide semiconductor field transistor (MOSFET) device. The feasibility of the widely adopted analytical solution for TSV stress-affected zone estimation, Lamé radial stress solution, is investigated and compared with the FEA-based submodeling approach. Analytic results reveal that the Lamé stress solution overestimates the TSV-induced stress in the concerned device by over 50%, and the difference in the estimated results of device performance between Lamé stress solution and FEA simulation can reach 22%. Moreover, a silicon–germanium-based lattice mismatch stressor is designed in a silicon p-type MOSFET, and its effects are analyzed and compared with those of TSV residual stress. The S/D stressor dominates the stress status of the device channel. The demonstrated FEA-based submodeling approach is effective in analyzing the stress impact from packaging and device-level components and estimating the KOZ issue in advanced electronic packaging.

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Simulation of Layout-Dependent Sti Stress and Its Impact on Circuit Performance

An Efficient Finite-Element Method-Based Stress Simulator for Integrated Circuit Optimization Designs

Modeling of layout-dependent STI stress in 65nm Technology

A two-dimensional analysis method on STI-aware layout-dependent stress effect

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Channel Stress Engineering Through Source/Drain Recess Optimization and Its Process Variation Study for 5 Nm-Node FinFETs

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors

A Physical-Based Pmosfets Threshold Voltage Model Including the STI Stress Effect

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

T-FinFET Mobility Enhancement from Process-Induced Stress and Compact Model Development

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Analysis of Influence of STI-induced Stress on 90 Nm SONOS Memory