A two-dimensional analysis method on STI-aware layout-dependent stress effect

Xiaojian Li,Zuochang Ye,Yaohua Tan,Yan, Wang
DOI: https://doi.org/10.1109/TED.2012.2214389
IF: 3.1
2012-01-01
IEEE Transactions on Electron Devices
Abstract:Strain technology has become indispensable for present CMOS integrated circuits (ICs) as the feature size of transistor shrinks. In the meantime, stress-induced variation has also become an unavoidable problem. Unintentional stress, such as shallow trench isolation (STI)- induced stress, is one of the main variation sources and is strongly layout dependent. In this paper, a new 2-D layout-dependen...
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