Abstract:Silicon-based complementary metal-oxide-semiconductor (CMOS) has been the mainstream logic style for modern digital integrated circuits (ICs) for decades but will meet its performance limits soon. Extensive investigations have thus been carried out using other semiconductors, especially those with extremely high carrier mobility. However, these materials usually have small or even zero band gap, which leads inevitably to large leakage current or voltage loss in ICs based on these semiconductors. In this work, we propose and demonstrate a strengthened CMOS (SCMOS) logic style using modified field-effect transistors (FETs) to solve this problem, that is, to achieve high performance, utilizing the high carrier mobility in these materials, and to reduce the current leakage resulting from their small band gap. Conventional CMOS FETs are modified to have an asymmetric structure where an additional assistant gate is introduced near the drain to further lower the potential barrier in on-state and to increase the barrier in off-state. SCMOS ICs are constructed using these modified asymmetric CMOS FETs, which demonstrate perfect rail-to-rail output with negligible voltage loss and 3 orders of magnitude suppression of the static power consumption and an operating speed similar to or even higher than that of CMOS ICs. Here, SCMOS is demonstrated using carbon nanotubes, but, in principle, this logic style can be used in ICs based on any small-band-gap semiconductors to provide simultaneously high performance and low power consumption.

Mechanical Strain and Temperature Aware Design Methodology for Thin-Film Transistor Based Pseudo-Cmos Logic Array.

Mechanical Strain and Temperature Optimization for Thin-Film Transistor Based Pseudo-CMOS Logic Array

Design Methodology for Thin-Film Transistor Based Pseudo-CMOS Logic Array with Multi-Layer Interconnect Architecture.

Design Methodology for TFT-Based Pseudo-CMOS Logic Array with Multilayer Interconnection Architecture and Optimization Algorithms

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Complementary Metal Oxide Silicon Integrated Circuits Incorporating Monolithically Integrated Stretchable Wavy Interconnects

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System

Strain-Induced Performance Variation in Stretchable Carbon-Nanotube Thin-Film Transistors and the Solution Through a Circular Channel Design

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

A two-dimensional analysis method on STI-aware layout-dependent stress effect

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

Methodology for standard cell compliance and detailed placement for triple patterning lithography

Efficient Thermal-Stress Coupling Design of Chiplet-Based System with Coaxial TSV Array

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Optimized Optical Design of Thin-Film Transistor Arrays for High Transmittance and Excellent Chromaticity