Abstract:This work demonstrates the design and fabrication of organic 3D stacked logic circuits, achieving a record transistor density of 100 transistors per square centimeter, alongside excellent 3D uniformity, through printing technologies. The printed thin‐film transistors are characterized by high saturation mobility, exceeding 1 cm2 V−1 s−1, and a high on/off ratio over 107. Additionally, the innovative 3D universal logic gates introduced here exhibited an outstanding voltage gain of 33.91 V V−1. Direct printing of conjugated polymer thin‐film transistors enables the fabrication of deformable devices with low cost, high throughput, and large area. However, a relatively poor device performance of printed devices remains a major obstacle to their application in high‐end display backplanes and integrated circuits. In this study, high‐performance and highly stackable printed organic transistors is developed, arrays, and circuits using a near‐amorphous polymer, indacenodithiophene‐co‐benzothiadiazole (IDT‐BT). The printed devices exhibited high saturation mobility (>1 cm2 V−1 s−1), high on/off ratio (>107), and low subthreshold slope (245 mV dec−1). In addition, 16 × 16 printed IDT‐BT arrays achieved 100% fabrication yield, with excellent device‐to‐device uniformity and low variations of mobility (9.55%) and threshold voltage (4.51%), and good operational and environmental stability (>365 days). Furthermore, five stacked 3D transistors are demonstrated with an excellent 3D uniformity without compromising device performance due to a low required thermal budget for processing amorphous IDT‐BT. Finally, a new concept of 3D universal logic gate with high voltage gain (33.91 V/V) and record density (100 printed transistors per cm2) is proposed and fabricated, which is relevant for the commercialization of low‐cost printed display backplanes and high‐density integrated circuits based on highly processable polymeric semiconductors.

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High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

Mechanical Strain and Temperature Optimization for Thin-Film Transistor Based Pseudo-CMOS Logic Array

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Laser Written Junctionless Dual In-Plane-gate Thin-Film Transistors with AND Logic Function

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays

Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System

Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction

High Mobility Amorphous Polymer‐Based 3D Stacked Pseudo Logic Circuits through Precision Printing

Universal Compact Model for Thin-Film Transistors and Circuit Simulation for Low-Cost Flexible Large Area Electronics

P‐1.15: TFT‐based Addressing and Readout Circuits for Hybrid LAE‐CMOS Interfacing

Optimized Optical Design of Thin-Film Transistor Arrays for High Transmittance and Excellent Chromaticity

Facile Four-Mask Processes for Organic Thin-Film Transistor Integration Structure With Metal Interconnect

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors