Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing

Small footprint transistor architecture for photoswitching logic and in situ memory

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Multi-gate-driven In-Ga-Zn-O memtransistors with a Sub-60 mV/decade subthreshold swing for neuromorphic and memlogic applications

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Logic-in-memory based on an atomically thin semiconductor

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology

A Combined N/PFET CFET-Based Design and Logic Technology Framework for CMOS Applications

Design and Simulation of a Novel Multi-Floating-gate Synaptic Nanowire Transistor for Neuromorphic Computing

Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

Floating Gate Carbon Nanotube Dual-Gate Field-Effect Transistor for Reconfigurable AND/OR Logic Gates

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing (adv. Funct. Mater. 4/2024)