Abstract:With the rapid development of information technology, various innovative computing architectures are leading the evolution of semiconductor chip technology. Due to the separation of memory and computation in traditional von Neumann architecture, the process of data transfer between memory and processor has given rise to a critical bottleneck that limits computing power and energy efficiency improvement in modern chips. Consequently, the development of high-efficient chip technology with storage-computing fusion architecture has drawn great attention from both academia and industry. In recent years, dedicated algorithmic acceleration chips based on complementary metal oxide semiconductor (CMOS) have experienced rapid growth, and playing an important role in basic numerical computing and emerging intelligent computing fields. One noteworthy task in basic numerical computing is polynomial regression calculation, which holds importance in information encryption, image processing and various other fields. Polynomial regression calculation entails a large number of multiplication operations which need massive multiplier resources in the field programmable gate array (FPGA) or graphics processing unit (GPU), resulting in huge hardware overhead and power consumption. To settle this issue, this paper develops a charge capture transistor based on indium gallium zinc oxide (InGaZnO, IGZO) channel. Leveraging the nonlinear characteristics of the device, the ternary multiplication operation is achieved in the analog domain by a single device. By applying the proposed transistor array, the sensitive parameter analysis of liver disease problem (a typical polynomial regression task) is effectively completed. In the emerging intelligent computing field, brain-inspired neural networks have garnered substantial attention for their ability to perform complex computation with low power consumption and reduced hardware cost. As one of the core components of brain-inspired neural networks, neurons possess the capabilities of nonlinear activation computing and spatiotemporal information integration computing. However, traditional CMOS technology struggles to efficiently adapt to brain-inspired neural networks due to their singular functionality and high hardware demands. To settle this issue, this paper develops an ion-gated neuromorphic transistor. Leveraging the synergistic regulation of top and back gates, the spatiotemporal information integration characteristic of neurons is achieved by a single device. Moreover, this paper proposes a correlation-based spiking neural network based on the spatiotemporal information integration characteristic of the transistor. The proposed design carries out the simulation of attention-shifting task, providing guidelines for the construction of novel brain-inspired neural network.

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing (adv. Funct. Mater. 4/2024)

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Multi-gate-driven In-Ga-Zn-O memtransistors with a Sub-60 mV/decade subthreshold swing for neuromorphic and memlogic applications

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Hardware Efficient Reconfigurable Logic-in-Memory Circuit Based Neural Network Computing.

Photoelectric Logic and in Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction

Exploring the potential of FinFET transistor technology in reconfigurable logic gates for enhanced computing performance

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Hybrid Spin-CMOS Polymorphic Logic Gate with Application in In-Memory Computing

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Logic-in-memory based on an atomically thin semiconductor

Research on Storage-Computing Fusion Transistors for Novel Computing Architectures

Small footprint transistor architecture for photoswitching logic and in situ memory

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic