Multi-gate-driven In-Ga-Zn-O memtransistors with a Sub-60 mV/decade subthreshold swing for neuromorphic and memlogic applications

Weijie Qiu,Jia Sun,Wanrong Liu,Yulong Huang,Yang Chen,Junliang Yang,Yongli Gao
DOI: https://doi.org/10.1016/j.orgel.2020.105810
IF: 3.868
2020-09-01
Organic Electronics
Abstract:<p>In this paper, multi-gate-driven In-Ga-Zn-O memtransistors integrated with memristive and transistor functions have been demonstrated. All of gates are covered by ion-gel and the stacking ion-gel/Al<sub>2</sub>O<sub>3</sub> is used as the gate dielectric. Benefiting from planar gate coupling and positive charge capture of Al<sub>2</sub>O<sub>3</sub>, a sub-60 mV/decade subthreshold swing is observed. In addition, neuromorphic behaviors and memory functions were realized by applying a spike on each gate. The memtransistors exhibit a significant analog-resistive switching behavior with a switching ratio as large as 3.8 × 10<sup>3</sup>. Finally, we realize the modulation between the two gates, and use it to achieve the function of nonvolatile "OR" memlogic operations. This work led to realize a multi-gate-driven memtransistor with a sub-60 mV/decade switching, which provides a way to realize brain-inspired memory processing systems in the future.</p>
materials science, multidisciplinary,physics, applied
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