Abstract:With the rapid development of information technology, various innovative computing architectures are leading the evolution of semiconductor chip technology. Due to the separation of memory and computation in traditional von Neumann architecture, the process of data transfer between memory and processor has given rise to a critical bottleneck that limits computing power and energy efficiency improvement in modern chips. Consequently, the development of high-efficient chip technology with storage-computing fusion architecture has drawn great attention from both academia and industry. In recent years, dedicated algorithmic acceleration chips based on complementary metal oxide semiconductor (CMOS) have experienced rapid growth, and playing an important role in basic numerical computing and emerging intelligent computing fields. One noteworthy task in basic numerical computing is polynomial regression calculation, which holds importance in information encryption, image processing and various other fields. Polynomial regression calculation entails a large number of multiplication operations which need massive multiplier resources in the field programmable gate array (FPGA) or graphics processing unit (GPU), resulting in huge hardware overhead and power consumption. To settle this issue, this paper develops a charge capture transistor based on indium gallium zinc oxide (InGaZnO, IGZO) channel. Leveraging the nonlinear characteristics of the device, the ternary multiplication operation is achieved in the analog domain by a single device. By applying the proposed transistor array, the sensitive parameter analysis of liver disease problem (a typical polynomial regression task) is effectively completed. In the emerging intelligent computing field, brain-inspired neural networks have garnered substantial attention for their ability to perform complex computation with low power consumption and reduced hardware cost. As one of the core components of brain-inspired neural networks, neurons possess the capabilities of nonlinear activation computing and spatiotemporal information integration computing. However, traditional CMOS technology struggles to efficiently adapt to brain-inspired neural networks due to their singular functionality and high hardware demands. To settle this issue, this paper develops an ion-gated neuromorphic transistor. Leveraging the synergistic regulation of top and back gates, the spatiotemporal information integration characteristic of neurons is achieved by a single device. Moreover, this paper proposes a correlation-based spiking neural network based on the spatiotemporal information integration characteristic of the transistor. The proposed design carries out the simulation of attention-shifting task, providing guidelines for the construction of novel brain-inspired neural network.

Neuromorphic Implementation of Logic Functions Based on Parallel Dual-Gate Thin-Film Transistors

Construction and Application of a Neuromorphic Circuit With Excitatory and Inhibitory Post-Synaptic Conduction Channels Implemented Using Dual-Gate Thin-Film Transistors

Boolean Logic Computing Based on Neuromorphic Transistor

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing

Adaptive Neural Activation and Neuromorphic Processing via Drain‐injection Threshold‐switching Float Gate Transistor Memory

All-Solution-Driven Thin-Film Transistor With Low Power Dissipation for Logic Electronics and Neuronal Synapse

Floating Gate Carbon Nanotube Dual-Gate Field-Effect Transistor for Reconfigurable AND/OR Logic Gates

Logic Computing with Stateful Neural Networks of Resistive Switches

Efficient Implementation of Boolean Logic Functions Using Double Gate Charge-Trapping Memory for In-Memory Computing

IGZO-based floating-gate synaptic transistors for neuromorphic computing

Low-Power and High-Speed HfLaO-based FE-TFTs for Artificial Synapse and Reconfigurable Logic Applications

InGaZnO Thin-Film Transistors with Coplanar Control Gates for Single-Device Logic Applications

Logic-in-memory based on an atomically thin semiconductor

(Invited) Multi-Terminal Oxide-based Electric-Double-Layer Thin-Film Transistors for Neuromorphic Systems

Quaternary Logic Circuits Based on Low-Voltage Programmable/Erasable Four-Level Organic Transistor Nonvolatile Memories

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Neuromorphic Computing Using a Floating Gate Modulated Photoelectric Synaptic Transistor

Research on Storage-Computing Fusion Transistors for Novel Computing Architectures

Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.