Abstract:With the rapid development of information technology, various innovative computing architectures are leading the evolution of semiconductor chip technology. Due to the separation of memory and computation in traditional von Neumann architecture, the process of data transfer between memory and processor has given rise to a critical bottleneck that limits computing power and energy efficiency improvement in modern chips. Consequently, the development of high-efficient chip technology with storage-computing fusion architecture has drawn great attention from both academia and industry. In recent years, dedicated algorithmic acceleration chips based on complementary metal oxide semiconductor (CMOS) have experienced rapid growth, and playing an important role in basic numerical computing and emerging intelligent computing fields. One noteworthy task in basic numerical computing is polynomial regression calculation, which holds importance in information encryption, image processing and various other fields. Polynomial regression calculation entails a large number of multiplication operations which need massive multiplier resources in the field programmable gate array (FPGA) or graphics processing unit (GPU), resulting in huge hardware overhead and power consumption. To settle this issue, this paper develops a charge capture transistor based on indium gallium zinc oxide (InGaZnO, IGZO) channel. Leveraging the nonlinear characteristics of the device, the ternary multiplication operation is achieved in the analog domain by a single device. By applying the proposed transistor array, the sensitive parameter analysis of liver disease problem (a typical polynomial regression task) is effectively completed. In the emerging intelligent computing field, brain-inspired neural networks have garnered substantial attention for their ability to perform complex computation with low power consumption and reduced hardware cost. As one of the core components of brain-inspired neural networks, neurons possess the capabilities of nonlinear activation computing and spatiotemporal information integration computing. However, traditional CMOS technology struggles to efficiently adapt to brain-inspired neural networks due to their singular functionality and high hardware demands. To settle this issue, this paper develops an ion-gated neuromorphic transistor. Leveraging the synergistic regulation of top and back gates, the spatiotemporal information integration characteristic of neurons is achieved by a single device. Moreover, this paper proposes a correlation-based spiking neural network based on the spatiotemporal information integration characteristic of the transistor. The proposed design carries out the simulation of attention-shifting task, providing guidelines for the construction of novel brain-inspired neural network.

Research on Storage-Computing Fusion Transistors for Novel Computing Architectures

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

IGZO-based floating-gate synaptic transistors for neuromorphic computing

Design and Simulation of a Novel Multi-Floating-gate Synaptic Nanowire Transistor for Neuromorphic Computing

A Low-Power Vertical Dual-Gate Neurotransistor with Short-Term Memory for High Energy-Efficient Neuromorphic Computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

Recent Progress on Emerging Transistor‐Based Neuromorphic Devices

Neuromorphic Computing Using a Floating Gate Modulated Photoelectric Synaptic Transistor

In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO<sub> <i>x</i> </sub>-Based Neuristor Array

In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO<sub><i>x</i></sub>-Based Neuristor Array

Multimodal 2D Ferroelectric Transistor with Integrated Perception-and-Computing-in-Memory Functions for Reservoir Computing

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory

Preparation and Performance Analysis of Thin-Film Artificial Intelligence Transistors Based on Integration of Storage and Computing

Oxide Ionic Neuro-Transistors for Bio-inspired Computing

Oxide Neuromorphic Transistors for Brain-like Computing

Enabling New Computation Paradigms with HyperFET - an Emerging Device.

Non-Volatile In-Ga-Zn-O Transistors for Neuromorphic Computing

All-Solution-Driven Thin-Film Transistor With Low Power Dissipation for Logic Electronics and Neuronal Synapse

Adaptive Neural Activation and Neuromorphic Processing via Drain‐injection Threshold‐switching Float Gate Transistor Memory