Abstract:Neuromorphic computing systems have shown powerful capability in tasks, such as recognition, learning, classification and decision-making, which are both challenging and inefficient in using the traditional computation architecture. The key elements including synapses and neurons, and their feasible hardware implementation are essential for practical neuromorphic computing. However, most existing synaptic devices used to emulate functions of a single synapse and the synapse-based networks are more energy intensive and less sustainable than their biological counterparts. The dendritic functions such as integration of spatiotemporal signals and spike-frequency coding characteristics have not been well implemented in a single synaptic device and thus play an imperative role in future practical hardware-based spiking neural networks. Moreover, most emerging synaptic transistors are fabricated by nanofabrication processes without CMOS compatibility for further wafer-scale integration. Herein, we demonstrate a novel ionic-gated silicon nanowire synaptic field-effect transistor (IGNWFET) with low power consumption (<400 fJ per switching event) based on the standard CMOS process platform. For the first time, the dendritic integration and dual-synaptic dendritic computations (such as "Add" and "Subtraction") could be realized by processing frequency coded spikes using a single device. Meanwhile, multi-functional characteristics of artificial synapses including the short-term and long-term synaptic plasticity, paired pulse facilitation and high-pass filtering were also successfully demonstrated based on 40 nm wide IGNWFETs. The migration of ions in polymer electrolyte and trapping in high-k dielectric were also experimentally studied in-depth to understand the short-term plasticity and long-term plasticity. Combined with statistical uniformity across a 4-inch wafer, the comprehensive performance of IGNWFET demonstrates its potential application in future biologically emulated neuromorphic systems.

Spatially-correlated Neuron Transistors with Ion-Gel Gating for Brain-Inspired Applications

Ion-gel Gated Field-Effect Transistors with Solution-Processed Oxide Semiconductors for Bioinspired Artificial Synapses

Multi-Gate Organic Neuron Transistors for Spatiotemporal Information Processing

Inorganic Proton Conducting Electrolyte Coupled Oxide-Based Dendritic Transistors for Synaptic Electronics

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

Synaptic devices with sodium alginate ionic gel gating for global regulation

Artificial Synapses Based on In-Plane Gate Organic Electrochemical Transistors.

Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes

Hardware Implementation of Photoelectrically Modulated Dendritic Arithmetic and Spike-Timing-dependent Plasticity Enabled by an Ion-Coupling Gate-Tunable Vertical 0D-Perovskite/2d-mos2hybrid-dimensional Van Der Waals Heterostructure

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

Side-liquid-gated electrochemical transistors and their neuromorphic applications

Solution-Processed InGaZnO-Based Artificial Neuron for Neuromorphic System

Advanced Neuromorphic Applications Enabled by Synaptic Ion‐Gating Vertical Transistors

Bio-inspired Two-dimensional Nanofluidic Ionic Transistor for Neuromorphic Signal Processing

Coplanar Multigate MoS2 Electric-Double-Layer Transistors for Neuromorphic Visual Recognition.

IGZO Nanofiber Photoelectric Neuromorphic Transistors with Indium Ratio Tuned Synaptic Plasticity

Proton Conducting Graphene Oxide Coupled Neuron Transistors for Brain-Inspired Cognitive Systems

Oxide-based Synaptic Transistors Gated by Solution-Processed Gelatin Electrolytes

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Amorphous InGaZnO$_{4}$ Neuron Transistors with Temporal and Spatial Summation Function