Abstract:Human brain is a powerful biological computer that can processing a large number of cognitive tasks simultaneously. Inspired by our brain, many emerging devices have been developed for neuromorphic computing and perception in recent years. Due to the interfacial electron/ion coupling, electric-double-layer (EDL) transistors gated by electrolytes are promising candidates for neuromorphic devices. Here, we demonstrate a multi-terminal indium-tin-oxide (ITO)-based EDL transistor gated by chitosan electrolyte and this device exhibits good electrical properties. Short-term synaptic plasticity modulation and neuron functions (temporal integration, coincidence detection) are investigated. Our results indicate that oxide-based EDL transistors are promising for neuromorphic application.

Synaptic Plasticity Modulation and Coincidence Detection Emulated in Multi-Terminal Neuromorphic Transistors