Abstract:Neuromorphic computing systems have shown powerful capability in tasks, such as recognition, learning, classification and decision-making, which are both challenging and inefficient in using the traditional computation architecture. The key elements including synapses and neurons, and their feasible hardware implementation are essential for practical neuromorphic computing. However, most existing synaptic devices used to emulate functions of a single synapse and the synapse-based networks are more energy intensive and less sustainable than their biological counterparts. The dendritic functions such as integration of spatiotemporal signals and spike-frequency coding characteristics have not been well implemented in a single synaptic device and thus play an imperative role in future practical hardware-based spiking neural networks. Moreover, most emerging synaptic transistors are fabricated by nanofabrication processes without CMOS compatibility for further wafer-scale integration. Herein, we demonstrate a novel ionic-gated silicon nanowire synaptic field-effect transistor (IGNWFET) with low power consumption (<400 fJ per switching event) based on the standard CMOS process platform. For the first time, the dendritic integration and dual-synaptic dendritic computations (such as "Add" and "Subtraction") could be realized by processing frequency coded spikes using a single device. Meanwhile, multi-functional characteristics of artificial synapses including the short-term and long-term synaptic plasticity, paired pulse facilitation and high-pass filtering were also successfully demonstrated based on 40 nm wide IGNWFETs. The migration of ions in polymer electrolyte and trapping in high-k dielectric were also experimentally studied in-depth to understand the short-term plasticity and long-term plasticity. Combined with statistical uniformity across a 4-inch wafer, the comprehensive performance of IGNWFET demonstrates its potential application in future biologically emulated neuromorphic systems.

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle‐Embedded IGZO Synaptic Transistor

Optimization of post-annealing temperature for high-performance synaptic transistors based on In–Ga–Zn–O channel and trap layers

Fully solution-driven charge trapping synaptic transistor with low energy consumption for neuromorphic computing

IGZO Nanofiber Photoelectric Neuromorphic Transistors with Indium Ratio Tuned Synaptic Plasticity

IGZO-based floating-gate synaptic transistors for neuromorphic computing

Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems

Synaptic Plasticity and Classical Conditioning Mimicked in Single Indium-Tungsten-oxide Based Neuromorphic Transistor

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

Low-Voltage Synaptic Transistors Based on PrO$_{\textit{x}}$/ZrO$_{\text{2}}$ Bilayer Dielectric for Neuromorphic Computing

Short-Term Plasticity and Synaptic Filtering Emulated in Electrolyte-Gated IGZO Transistors

Non-Volatile In-Ga-Zn-O Transistors for Neuromorphic Computing

Flexible transparent InZnO synapse transistor based on Li1.3Al0.3Ti0.7(PO4)3/polyvinyl pyrrolidone nanocomposites electrolyte film for neuromorphic computing

Synaptic Metaplasticity Emulation in a Freestanding Oxide-Based Neuromorphic Transistor with Dual In-Plane Gates

Synaptic Behaviors Mimicked in Low‐voltage P‐type CuI Neuromorphic Transistors

InGaZnO Synaptic Transistor Using Metal-Hydroxyl Traps at Back Channel for Weight Modulation

High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

Low-power and high PPF feature synaptic transistors with 3D interface based on SnO<sub>2</sub> nanofibers for neuromorphic application

Artificial synapse based on low-voltage Ni-doped CuI thin-film transistors for neuromorphic application

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.