Abstract:Non-volatile memory (NVM) based computing-in-memory (CIM) shows significant advantages in handling deep learning tasks for artificial intelligence (AI) applications. To overcome the decreasing cost effectiveness of transistor scaling and the intrinsic inefficiency of data-shuttling in the von-Neumann architecture, CIM is proposed to realize high-speed and low-power system with parallel multiplication accumulation (MAC) computing [1] [2]. However, current demonstrations are mainly based on single macro and present limited computing parallelism. Realizing a fully-integrated CIM chip with a complete neural network model is still missing. The major challenges lie in: (1) The IR drop and transient errors when carrying out MAC operations in non-volatile memory arrays decrease the computing accuracy and further limit the parallelism; (2) The inefficiency of the interface blocks between different arrays due to the power overhead of the A/D and D/A converters (shown in Fig. 33.2.1). To address these challenges, this work proposes: (1) A sign-weighted 2T2R (SW-2T2R) array to reduce IR drop by decreasing the accumulative SL current (ISL), and eventually boost the computing parallelism; (2) a low-power interface design with resolution-adjustable LPAR-ADC to realize flexible tradeoff between system accuracy and power consumption. In this manner, this work implements a fully-integrated 784-100-10 MLP model on an integrated CIM chip with158.8kb analog ReRAMs. This chip realizes high recognition accuracy (94.4%) on MNIST database, high inference speed (77 µs/lmage), and 78.4 TOPS/W peak energy efficiency. The CMOS circuits are fabricated in a 130nm process.

An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

2T1C DRAM based on semiconducting MoS<sub>2</sub> and semimetallic graphene for in-memory computing

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

A Fully Digital SRAM-Based Four-Layer In-Memory Computing Unit Achieving Multiplication Operations and Results Store

An in-memory computing architecture based on a duplex 2D material structure for in-situ machine learning

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

A 9T-SRAM In-Memory Computing Macro for Boolean Logic and Multiply-and-accumulate Operations

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

A Multiply-Less Approximate SRAM Compute-In-Memory Macro for Neural-Network Inference

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

A 28nm 8928Kb/mm 2 -Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM.

A 4-Bit Calibration-Free Computing-In-Memory Macro with 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell Edram

A Computing In-Memory Multibit Multiplication Based on Decoupling and In-Array Storing

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

Ternary In-Memory MAC Accelerator With Dual-6T SRAM Cell for Deep Neural Networks

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.