Abstract:Silicon-based semiconductor transistors are approaching their physical limits due to shrinking feature sizes. Simultaneously, traditional silicon-based von Neumann architectures exhibit significant latency and power consumption issues in data-centric applications, such as the Internet of Things and artificial intelligence. To tackle these challenges, this study introduces a novel approach: Magnetoresistance Random Access Memory (MRAM) computing in-memory (CIM) using gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET). The proposed MRAM array comprised three transistors and one perpendicular magnetic anisotropy spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) (3T1M) cell and achieves full-array Boolean logic operations and half/full-adder operations. The calculated results can be stored in-situ during the computing phase without requiring additional peripheral circuits. A 16 Kb MRAM was simulated in both GAA-CNTFET/p-SOT-MTJ and 14-nm FinFET/p-SOT-MTJ technologies to examine the effectiveness of the proposed design. Compared to its 14-nm FinFET/p-SOT-MTJ counterparts, the write and computing latencies of the GAA-CNTFET/p-SOT-MTJ CIM macro were reduced by approximately 21% and 20.6%, respectively, while the read and computing energy consumption by approximately 45.3% and 24.7%, respectively. Moreover, the proposed in-memory Boolean logic throughput was 8192 GOPS, which was approximately 160–250 times higher than that of existing CIM solutions, in which only two rows of word lines can be activated.

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

A CFMB STT-MRAM-Based Computing-in-Memory Proposal with Cascade Computing Unit for Edge AI Devices

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

In-MRAM Computing Based on Complementary-Sensing Time-Based Readout Circuit Using Hybrid VGSOT-MTJ/GAA-CNTFET

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

TAM: A Computing in Memory Based on Tandem Array Within STT-MRAM for Energy-Efficient Analog MAC Operation

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

A Novel In-memory Computing Scheme Based on Toggle Spin Torque MRAM.

A Computing-in-memory Scheme with Series Bit-cell in STT-MRAM for Efficient Multi-bit Analog Multiplication

Implementation of 16 Boolean Logic Operations Based on One Basic Cell of Spin-Transfer-torque Magnetic Random Access Memory

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

TAC-RAM: A 65nm 4kb SRAM Computing-in-Memory Design with 57.55 TOPS/W Supporting Multibit Matrix-Vector Multiplication for Binarized Neural Network.

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

An In-Memory-Computing STT-MRAM Macro with Analog ReLU and Pooling Layers for Ultra-High Efficient Neural Network

A6T-3MSOT-MRAMforin-memorycomputingwith reconfigurable arithmetic operations

A Fully Digital SRAM-Based Four-Layer In-Memory Computing Unit Achieving Multiplication Operations and Results Store

Efficient Time-Domain In-Memory Computing Based on TST-MRAM

Complementary Series-connected STT-MTJ for Time-based Computing-in-Memory

Area and Energy Efficient Short-Circuit-Logic-Based STT-MRAM Crossbar Array for Binary Neural Networks

A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM