Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

Chao Wang,Zhaohao Wang,Zhongkui Zhang,Youguang Zhang,Weisheng Zhao
DOI: https://doi.org/10.1109/ted.2023.3296343
IF: 3.1
2023-01-01
IEEE Transactions on Electron Devices
Abstract:Recently, the crossbar array chip based on spin-transfer-torque magnetoresistive random access memory (STT-MRAM) has been proposed for in-memory computing (IMC), which enables efficient analog multiply-accumulate (MAC) operation to reduce the power consumption of artificial neural networks (ANNs). We propose three optimized designs for the 3-transistor and 2-magnetic-tunnel-junction (3T2J) bit-cell employed in the STT-MRAM crossbar array chip in terms of layout and circuit design. First, by adjusting the transistor order of the 3T2J structure, the layout area is reduced by 10%. Second, a 2-finger configuration is adopted for the access transistor to improve the write performance by 19.1%, while the layout area remains unchanged. Third, a novel 4T2J bit-cell design is proposed, in which the write performance is more balanced than that of the 3T2J one, and the bit-cell area is reduced by 20% with the concise routing.
engineering, electrical & electronic,physics, applied
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