Efficient Time-Domain In-Memory Computing Based on TST-MRAM

Jinkai Wang,Yue Zhang,Chenyu Lian,Yining Bai,Zhe Huang,Guanda Wang,Kun Zhang,Youguang Zhang,Weisheng Zhao
DOI: https://doi.org/10.1109/iscas45731.2020.9180658
2020-01-01
Abstract:In-memory computing is highly promising to address the processor-memory data transfer bottleneck in current computational paradigm. We firstly propose a timedomain in-memory computing (TIMC) scheme based on highspeed low-power toggle spin torque random access memory (TST-MRAM). The difference of voltage drops of bitline caused by simultaneously-activated bit-cells is reflected to time domain. Reconfigurable logic operations can be performed by utilizing D flip-flops (DFFs) to record the outputs at different moments. In order to demonstrate the advantages of this scheme in terms of speed and energy consumption, an efficient multi-digit addition circuit has been designed and analyzed. Compared with existing IMC schemes, such as spin-transfer torque computing-in-memory (STT-CiM) structure, up to 67% energy saving and 10 times delay improvement can be achieved in the case of four-digit addition by using TIMC scheme.
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