Abstract:Recent SRAM-based computation-in-memory (CIM) macros enable mid-to-high precision multiply-and-accumulate (MAC) operations with improved energy efficiency using ultra-small/small capacity (0.4-8KB) memory devices. However, advanced CIM-based edge-AI chips favor multiple mid/large capacity SRAM-CIM macros: with high input (IN) and weight (W) precision to reduce the frequency of data reloads from external DRAM, and to avoid the need for additional SRAM buffers or ultra-large on-chip weight buffers. However, enlarging memory capacity and throughput increases the delay parasitics on WLs and BLs, and the number of parallel computing elements; resulting in longer compute latency (tAC), lower energy-efficiency (EF), degraded signal margin, and larger fluctuations in power consumption across data-patterns (see Fig. 16.3.1). Recent SRAM-CIM macros tend to not use in-lab SRAM cells, with a logic-based layout, in favor of foundry provided compact-layout 8T [2], 3, [5] or 6T cells with local-computing cells (LCCs) [4], [6] to reduce the cell-array area and facilitate manufacturing. This paper presents a SRAM-CIM structure using (1) a segmented-BL charge-sharing (SBCS) scheme for MAC operations, with low energy consumption and a consistently high signal margin across MAC values (MACV); (2) An new LCC cell, called a source-injection local-multiplication cell (SILMC), to support the SBCS scheme with a consistent signal margin against transistor process variation; and (3) A prioritized-hybrid-ADC (Ph-ADC) to achieve a small area and power overhead for analog readout. A 28nm 384kb SRAM-CIM macro was fabricated using a foundry compact-6T cell with support for MAC operations with 16 accumulations of 8b-inputs and 8b-weights with near-full precision output (20b). This macro achieves a 7.2ns tAC and a 22.75TOPS/W EF for 8b-MAC operations with an FoM (IN-precision × W-precision × output-ratio × output-channel × EF/tAC) 6× higher than prior work.

C 2 IM: A Compact Computing-In-Memory Unit of 10 Transistors with Standard 6T SRAM

An Overview of Computing-in-Memory Interfaces

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

A High-Throughput Energy–Area-Efficient Computing-in-Memory SRAM Using Unified Charge-Processing Network

In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations

16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors

An XOR-10T SRAM computing-in-memory macro with current MAC operations and time-to-digital conversion for BNN edge processors

A Non-volatile Computing-in-Memory ReRAM Macro using Two-bit Current-Mode Sensing Amplifier

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.

A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

RRAM Computing-in-Memory Using Transient Charge Transferring for Low-Power and Small-Latency AI Edge Inference

A 28 nm 81 Kb 5995.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output