Abstract:The research aims at nonvisual defects causing the poly gate leakage failure and the corresponding inline voltage-contrast (VC) inspection. Electron beam inspection (EBI) begins to be frequently used for scanning either SRAM or DRAM cell area in nano-scaled technologies. The research, furthermore, extends EBI to logical area of an ASIC product and proposes an inline detectable methodology for gate leakages. Extreme tiny and nonvisual residues could happen during gate etch processes by the step height between active area (AA) and shallow trench isolation (STI), and the tiny defects are difficult to be located even some of those did lead to chip probe (CP) test failure. The subsequent implant processes would punch through those tiny poly residues, make the residue being conductive, and finally electrons on the gate would leak to the ground through the residue. Those nonvisual residues act as bridges for gate leakages. EBI with designed positive charging modes was applied into the series of implement steps and found the leakage by a significant voltage contrast signal post the source/drain implantation. The bright VC of the gate poly implied the leakage electrons charging on the gate. A series of process experiments based on the model for reducing leakages was tested and quickly verified by the EBI in front end of the line. An optimal process integration condition was soon carried out with a significant chip yield enhancement.

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Pseudo transistor matrix for defect density extraction of gate oxide shorts

Defect Density Extraction of Gate Oxide Shorts Incorporating Defect Clustering with Pseudo Transistor Arrays

An improved method for test chip design

SEMICONDUCTOR PACKAGE STRUCTURE HAVING MICRO-ISOLATION CAVITY

Design and application of test structure array based on modular unit

The detection and investigation of poly line leakage by electron-beam inspection

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

High-Throughput Addressable Test Structure Design for Nano-Scaled CMOS Device Characterization

Nanometer Interconnect Test Structure for Modeling of Process Variation

Survey on Testing Methods for 3D IC

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Mechanism and Detection of Poly Gate Leakage with Nonvisual Defects by Voltage Contrast Inspection

Methodology and Application of the Detection of Invisible Defect by Voltage Contrast Inspection

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

Modeling TSV Open Defects in 3D-Stacked DRAM

Automated X-ray inspection of chip-to-chip interconnections of Si-on-Si MCM's

An Efficient Metrology to Sense Micro-Metal Contamination in Fine-Pitch Package