Abstract:The research aims at nonvisual defects causing the poly gate leakage failure and the corresponding inline voltage-contrast (VC) inspection. Electron beam inspection (EBI) begins to be frequently used for scanning either SRAM or DRAM cell area in nano-scaled technologies. The research, furthermore, extends EBI to logical area of an ASIC product and proposes an inline detectable methodology for gate leakages. Extreme tiny and nonvisual residues could happen during gate etch processes by the step height between active area (AA) and shallow trench isolation (STI), and the tiny defects are difficult to be located even some of those did lead to chip probe (CP) test failure. The subsequent implant processes would punch through those tiny poly residues, make the residue being conductive, and finally electrons on the gate would leak to the ground through the residue. Those nonvisual residues act as bridges for gate leakages. EBI with designed positive charging modes was applied into the series of implement steps and found the leakage by a significant voltage contrast signal post the source/drain implantation. The bright VC of the gate poly implied the leakage electrons charging on the gate. A series of process experiments based on the model for reducing leakages was tested and quickly verified by the EBI in front end of the line. An optimal process integration condition was soon carried out with a significant chip yield enhancement.

The detection and investigation of poly line leakage by electron-beam inspection

Mechanism and Detection of Poly Gate Leakage with Nonvisual Defects by Voltage Contrast Inspection

Methodology and Application of the Detection of Invisible Defect by Voltage Contrast Inspection

The Study And Investigation Of Inline E-Beam Inspection For 28nm Process Development

The Study and Investigation of Inline E-Beam Inspection for 28nm Process Window Monitor

Testing Structure for Detection of Poly Stringer Defects in CMOS ICs

Alternative Voltage-Contrast Inspection for Pmos Leakage Due to Adjacent Nmos Contact-to-poly Misalignment

The detection and investigation of Tungsten-plug voids by electron-beam inspection

Detection of Electrical Defects by Distinguish Methodology Using an Advanced E-Beam Inspection System

The Inline Detection of Tiny Bubble Defect and Solution for 14NM Photolithography Process

The detection and investigation of SRAM data retention soft failures by voltage contrast inspection

The Inspection and Solution of Inline CT Defect for 28NM Process Improvement

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Investigation and Discovery of the Integration of FEOL Process by Electron Beam Inspections

The High Electron Dose of Voltage Contrast Inspection for the Detection of Nickel Silicide Piping Defects

Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

The Type and Solution of Inline Poly Residue Defect for 28 HK Process Improvement

The total inspection solutions of extreme tiny defect in BEOL advanced semiconductor process

Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production

The Inspection Solutions of 3bar Structure Cu Void in BEOL Advanced Semiconductor Process