Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production

Fault Detection and Redundancy Design for TSVs in 3D ICs.

An In-line Test Method for the TSV Insulation Integrity

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

TSV Fault Modeling and A BIST Solution for TSV Pre-bond Test.

Electrical Measurement and Analysis of TSV/RDL for 3D Integration

Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

A Low-Cost TSV Test and Diagnosis Scheme Based on Binary Search Method

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

The Detection of Open and Leakage Faults for Prebond TSV Test Based on Weak Current Source

A New Cellular-Based Redundant TSV Structure for Clustered Faults

On Effective Through-Silicon Via Repair for 3-D-stacked ICs

Testing Structure for Detection of Poly Stringer Defects in CMOS ICs

An improved method for test chip design

A Post-Bond TSVs Test Solution for Leakage Fault.

A Fully Automated Large-Scale Addressable Test Chip Design with High Reliability

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

The Study And Investigation Of Inline E-Beam Inspection For 28nm Process Development

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

In-line Testing of Blind TSVs for 3D IC Integration and M/NEMS Packaging

On Effective Tsv Repair For 3d-Stacked Ics