Abstract:Using air-gaps instead of conventional silicon dioxide as the insulations of TSV has the potential to improve the electrical performance and solve some thermal reliability issues of TSV. Problems regarding the air-gap TSV process are studied and solutions for electrical parameters and reliability are investigated. Thanks to large difference of dielectric constant between air and silicon dioxide, the capacitance of air-gap TSV is considerably reduced to 48 fF, and the leakage current is quiet low (1.22 pA at 20 V). Finite element analysis (FEA) shows the stresses in the substrate and insulations are reduced significantly by air-gaps, evaluating the temperature stresses and deformation on the air-gap liner. Because of the air-gap, the Cu plugs are free from shear constraint and stress interaction from the sidewalls. The thermal shock test (TST) shows satisfactory barrier integrity and good stability of air-gap liner, since sudden changes of temperature stresses didn't deteriorate the insulation ability of air-gaps. Thermal variation underlines an impact of temperature on the electrical parameters of air-gap TSV, where the C-V and I-V characteristics are measured from 25 °C to 100 °C with 25 °C increment. A typical hysteresis occurred, which is considered to be attributed to the interface states and traps in the insulator adjacent to the interface. Those simulation and electrical tests demonstrate good thermo-mechanical stability and intrinsic dielectric property, fulfilling the requirement of applications.

In-line Testing of Blind TSVs for 3D IC Integration and M/NEMS Packaging

An In-line Test Method for the TSV Insulation Integrity

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

On the Efficacy of Through-Silicon-Via Inductors

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Post-bond Test for TSVs Using Voltage Division.

Testing 3D chips containing through-silicon vias

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Electrical Measurement and Analysis of TSV/RDL for 3D Integration

BIST Methodology, Architecture and Circuits for Pre-Bond TSV Testing in 3D Stacking IC Systems

Thermal and electrical tests of air-gap TSV

Capacitive coupling analysis of TSV array in 3D packaging

Electrothermal modelling of through silicon via (TSV) interconnects

A 3D Integration Testing Vehicle with TSV Interconnects