Abstract:Using air-gaps instead of conventional silicon dioxide as the insulations of TSV has the potential to improve the electrical performance and solve some thermal reliability issues of TSV. Problems regarding the air-gap TSV process are studied and solutions for electrical parameters and reliability are investigated. Thanks to large difference of dielectric constant between air and silicon dioxide, the capacitance of air-gap TSV is considerably reduced to 48 fF, and the leakage current is quiet low (1.22 pA at 20 V). Finite element analysis (FEA) shows the stresses in the substrate and insulations are reduced significantly by air-gaps, evaluating the temperature stresses and deformation on the air-gap liner. Because of the air-gap, the Cu plugs are free from shear constraint and stress interaction from the sidewalls. The thermal shock test (TST) shows satisfactory barrier integrity and good stability of air-gap liner, since sudden changes of temperature stresses didn't deteriorate the insulation ability of air-gaps. Thermal variation underlines an impact of temperature on the electrical parameters of air-gap TSV, where the C-V and I-V characteristics are measured from 25 °C to 100 °C with 25 °C increment. A typical hysteresis occurred, which is considered to be attributed to the interface states and traps in the insulator adjacent to the interface. Those simulation and electrical tests demonstrate good thermo-mechanical stability and intrinsic dielectric property, fulfilling the requirement of applications.

An In-line Test Method for the TSV Insulation Integrity

In-line Testing of Blind TSVs for 3D IC Integration and M/NEMS Packaging

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

On the Efficacy of Through-Silicon-Via Inductors

Electrothermal modelling of through silicon via (TSV) interconnects

Post-bond Test for TSVs Using Voltage Division.

Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Thermal and electrical tests of air-gap TSV

Electrical Characterization of Sidewall Insulation Layer of TSV

Study of Tsv Leakage Current and Breakdown Voltage

Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Mechanical Reliability Testing of Air-Gap Through-Silicon Vias

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

Voltage Skew-Based Test Technique for Pre-Bond TSVs in 3-D ICs

Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging

Thermal Reliability Tests of Air-Gap TSVs with Combined Air-SiO2Liners

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Reliability of Through-Silicon-vias (tsvs) with Benzocyclobutene Liners.