Abstract:Using air-gaps instead of conventional silicon dioxide as the insulations of TSV has the potential to improve the electrical performance and solve some thermal reliability issues of TSV. Problems regarding the air-gap TSV process are studied and solutions for electrical parameters and reliability are investigated. Thanks to large difference of dielectric constant between air and silicon dioxide, the capacitance of air-gap TSV is considerably reduced to 48 fF, and the leakage current is quiet low (1.22 pA at 20 V). Finite element analysis (FEA) shows the stresses in the substrate and insulations are reduced significantly by air-gaps, evaluating the temperature stresses and deformation on the air-gap liner. Because of the air-gap, the Cu plugs are free from shear constraint and stress interaction from the sidewalls. The thermal shock test (TST) shows satisfactory barrier integrity and good stability of air-gap liner, since sudden changes of temperature stresses didn't deteriorate the insulation ability of air-gaps. Thermal variation underlines an impact of temperature on the electrical parameters of air-gap TSV, where the C-V and I-V characteristics are measured from 25 °C to 100 °C with 25 °C increment. A typical hysteresis occurred, which is considered to be attributed to the interface states and traps in the insulator adjacent to the interface. Those simulation and electrical tests demonstrate good thermo-mechanical stability and intrinsic dielectric property, fulfilling the requirement of applications.

Electrical Characterization of Sidewall Insulation Layer of TSV

Electrothermal modelling of through silicon via (TSV) interconnects

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

An In-line Test Method for the TSV Insulation Integrity

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

Thermal and electrical tests of air-gap TSV

Ultralow-Capacitance Through-Silicon Vias with Annular Air-Gap Insulation Layers

Low Capacitance Through-Silicon-Vias with Uniform Benzocyclobutene Insulation Layers

Development of Ultra-Low Capacitance Through-Silicon-vias (tsvs) with Air-Gap Liner

Low-Capacitance Through-Silicon-Vias with Combined Air/Sio2 Liners

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Study of Tsv Leakage Current and Breakdown Voltage

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Reliability of Through-Silicon-vias (tsvs) with Benzocyclobutene Liners.

Implementation of Air-Gap Through-Silicon-Vias (TSVs) Using Sacrificial Technology

In-line Testing of Blind TSVs for 3D IC Integration and M/NEMS Packaging

Design, Fabrication and Characterization of TSV Interposer Integrated 3D Capacitor for SIP Applications