Abstract:The current technology in micro-and nano-electronics is insufficient to meet future demands for several applications. Most state-of-the-art solutions rely on so-called embedded technologies, which are both expensive and complex. One solution to the problem of integrating mixed technologies is the concept of 3D stacking. Our approach implements an epitaxial etch-stop layer for thickness control of the thinning process. Using this etch-stop layer, we can create a precise alignment of back-side vias to the landing pads in the first metal layer of the active CMOS, resulting in small via diameters and high connection densities between individual-layers of the 3D stack. Furthermore, we can use other materials, like GaAs (gallium arsenide), in combination with an epitaxial lift-off process. We use a copper-tin soldering process based on the solid-liquid interdiffusion (solid) process to create the electrical and mechanical connection between the single chip layers. Using this process, we created true multilayer stacks and tested them with respect to the static electrical properties of ohmic contacts and interchip vias. We directly incorporated these results in the design of test circuits that create tests for stuck-at failures of the interchip connections after stack assembly. This article presents a technology overview of how to achieve the goal in a 3D fabrication process. It also shows measurements for characterizing interconnects.

Testing 3D chips containing through-silicon vias

A 3D Integration Testing Vehicle with TSV Interconnects

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Design and Fabrication of a Test Chip for 3D Integration Process Evaluation

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Self-test methodology and structures for pre-bond TSV testing in 3D-IC system

BIST Methodology, Architecture and Circuits for Pre-Bond TSV Testing in 3D Stacking IC Systems

3D Chip Stack Technology Using Through-Chip Interconnects

System-Level Analysis of 3D ICs with Thermal TSVs

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

Scheduling Tests for 3D Stacked Chips under Power Constraints

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Through silicon via copper electrodeposition for 3D integration

Integrated Algorithm for 3-D IC Through-Silicon Via Assignment

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Mechanical Reliability Testing of Air-Gap Through-Silicon Vias

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

In-line Testing of Blind TSVs for 3D IC Integration and M/NEMS Packaging

Through-Silicon-Via Assignment for 3D ICs