Abstract:The research aims at nonvisual defects causing the poly gate leakage failure and the corresponding inline voltage-contrast (VC) inspection. Electron beam inspection (EBI) begins to be frequently used for scanning either SRAM or DRAM cell area in nano-scaled technologies. The research, furthermore, extends EBI to logical area of an ASIC product and proposes an inline detectable methodology for gate leakages. Extreme tiny and nonvisual residues could happen during gate etch processes by the step height between active area (AA) and shallow trench isolation (STI), and the tiny defects are difficult to be located even some of those did lead to chip probe (CP) test failure. The subsequent implant processes would punch through those tiny poly residues, make the residue being conductive, and finally electrons on the gate would leak to the ground through the residue. Those nonvisual residues act as bridges for gate leakages. EBI with designed positive charging modes was applied into the series of implement steps and found the leakage by a significant voltage contrast signal post the source/drain implantation. The bright VC of the gate poly implied the leakage electrons charging on the gate. A series of process experiments based on the model for reducing leakages was tested and quickly verified by the EBI in front end of the line. An optimal process integration condition was soon carried out with a significant chip yield enhancement.

Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

Alternative Voltage-Contrast Inspection for Pmos Leakage Due to Adjacent Nmos Contact-to-poly Misalignment

Mechanism and Detection of Poly Gate Leakage with Nonvisual Defects by Voltage Contrast Inspection

The detection and investigation of SRAM data retention soft failures by voltage contrast inspection

Methodology and Application of the Detection of Invisible Defect by Voltage Contrast Inspection

Design and Implementation of HV-PMOS for PDP Scan Driver IC

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Measurement of SRAM Standby Leakage under Advanced Logic Process

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

A novel method for accurate measurement and decoupling of SRAM standby leakage

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

The detection and investigation of poly line leakage by electron-beam inspection

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

Heavy Ion Testing and Numerical Modeling of Single EventMultiple-Cell Upsets on 90 nm Bulk CMOS SRAM

The Study and Investigation of Inline E-Beam Inspection for 28nm Process Window Monitor

Understanding the Competitive Interaction in Leakage Mechanisms for Effective Row Hammer Mitigation in Sub-20 Nm DRAM

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation