Abstract:This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross-coupled structure consisting standard inverter with a stacked transistor and Schmitt-trigger inverter with a double-length pull-up transistor. This along with the read path separated from true internal storage nodes eliminates the read-disturbance. Furthermore, it performs its write operation in pseudo differential form through write bitline and control signal with a write-assist technique. To estimate the proposed LP10T SRAM cell’s performance, it is compared with some state-of-the-art SRAM cells using HSPICE in 16-nm CMOS predictive technology model at 0.7 V supply voltage under harsh manufacturing process, voltage, and temperature variations. The proposed SRAM cell offers 4.65X/1.57X/1.46X improvement in RSNM/WSNM/WM and 4.40X/1.69X narrower spread in RSNM/WM compared to the conventional 6T SRAM cell. Furthermore, it shows 1.26X/1.08X/1.01X higher RSNM/WSNM/WM and 1.71X/1.25X tighter/wider spread in RSNM/WM compared to the best studied SRAM cells. The proposed SRAM cell indicates 74.48%/1.41% higher/lower read/write delay compared to the 6T SRAM cell. Moreover, it exhibits the third-(second-) best read (write) dynamic power, consuming 29.69% (26.87%) lower than the 6T SRAM cell. The leakage power is minimized by the proposed design, which is 37.35% and 12.08% lower than that of the 6T and best studied cells, respectively. Nonetheless, the proposed LP10T SRAM cell occupies 1.313X higher area compared to the 6T SRAM cell.

A novel method for accurate measurement and decoupling of SRAM standby leakage

Measurement of SRAM Standby Leakage under Advanced Logic Process

SRAM Standby Leakage Decoupling Analysis for Different Leakage Reduction Techniques

A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

An Ultra-Low Leakage Bitcell Structure with the Feedforward Self-Suppression Scheme for Near-Threshold SRAM.

Ultra8T: A Sub-Threshold 8T SRAM with Leakage Detection

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

A novel low power 64-kb SRAM using bit-lines charge-recycling and non-uniform cell scheme

A Design of Subthreshold SRAM Cell Based on RSCE and RNCE.

A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection

A 40-Nm Ultra-Low Leakage Voltage-Stacked SRAM for Intelligent IoT Sensors

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

A 32-Kb High-Speed 8t Sram With Fine-Grained Bitline Stacking For Leakage Reduction In 7nm Technology

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins

Leakage Power Analysis and Estimation in SRAMs

1.03pW/b Ultra-Low Leakage Voltage-Stacked SRAM for Intelligent Edge Processors

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

An Efficient Optimization Based Method to Evaluate the DRV of SRAM Cells

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

A Leakage Power Estimation Method for Standard Cell Based Design