Abstract:This chapter explores how static random-access memory (SRAM) functionality is influenced by application of a Body-Bias voltage. Investigating the SRAM stability is a complex task itself, even without any applied Body-Bias. After a short introduction to yield and why nowadays SRAM stability is the major detractor of silicon yield, the bitcell circuit is presented and its major failure modes are discussed. After further inquiries about how technology specifications about SRAM can be embedded into spice model cards, it is shown how to use the latter to build a yield model under the Vmin paradigm, by which a single voltage value is taken as minimum supported operating voltage at each different process and temperature condition, and how the model fits to silicon data. Body-Bias effects on the bitcell are then discussed and the high frequency (HF) functionality is explored with both experimental and theoretical results, leading to a very complex framework that calls for a new paradigm based on the maximum number of instantiation Nmax, in order to have an efficient data analysis. This is carried out with the yieldogram tool, that ultimately allows to present Body-Bias effects on the expected, mass-scale production yield of arbitrary amounts of memory, even at HF. This chapter text includes and extends the content of some of the author’s publications (Thomas et al., 2014 IEEE international electron devices meeting, pp 3.4.1–3.4.4, 2014. https://doi.org/10.1109/IEDM.2014.7046973; Ranica et al., 2016 IEEE symposium on VLSI circuits (VLSI-circuits), pp 1–2, 2016. 10.1109/VLSIC.2016.7573512; Ciampolini et al., 2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), pp. 1–8, 2016. https://doi.org/10.1145/2966986.2967031; Akyel, Statistical methodologies for modeling the impact of process variability in ultra-deep-submicron SRAMs, PhD manuscript, Université de Grenoble, 2014; Dhori et al., 2017 IEEE international symposium on defect and fault tolerance in VLSI and nanotechnology systems (DFT), pp 1–6, 2017. 10.1109/DFT.2017.8244429; Ciampolini et al., J Low Power Electron 8(1):106, 2012. 10.1166/jolpe.2012.1175).

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Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

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